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| NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 MARCH 94 FEATURES * 120 Volt VCEO * 1 Amp continuous current * Gain of 2K at IC=1 Amp * Ptot= 1 Watt ZTX604 ZTX605 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C derate above 25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ZTX604 MIN. 120 100 10 0.01 10 IEBO ICES VCE(sat) VBE(sat) VBE(on) 0.1 10 1.0 1.5 1.8 1.7 3-212 MAX. SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX605 MIN. 140 120 10 MAX. V V V A A A A A A E-Line TO92 Compatible ZTX604 120 100 10 4 1 1 5.7 -55 to +200 UNIT CONDITIONS. IC=100A IC=10mA* IE=100A VCB=100V VCB=120V VCB=100V,Tamb=100C VCB=120V,Tamb=100C VEB=8V VCES=100V VCES=120V IC=250mA, IB=0.25mA* IC=1A, IB=1mA* IC=1A, IB=1mA* IC=1A, VCE=5V* ZTX605 140 120 UNIT V V V A A W mW/ C C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). 0.01 10 0.1 Emitter Cut-Off Current Colllector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage 10 1.0 1.5 1.8 1.7 V V V V ZTX604 ZTX605 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL ZTX604 MIN. Static Forward hFE Current Transfer Ratio 2K 5K 2K 0.5K 150 MAX. ZTX605 MIN. 2K 5K 2K 0.5K 150 90 Typical 15 Typical 0.5 Typical 1.6 Typical MAX. IC=50mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* MHz pF pF s s UNIT CONDITIONS. 100K 100K Transition Frequency Input Capacitance Output Capacitance Switching Times fT Cibo Cobo ton toff IC=100mA, VCE=10V f=20MHz VEB=500mV, f=1MHz VCB=10V, f=1MHz IC=500mA, VCE=10V IB1=IB2=0.5mA *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Maximum Power Dissipation (W) 1.0 R5 = 1M 0.8 R5 = 0.6 0.4 0.2 0 1 10 100 200 DC Conditions ZTX604 ZTX605 R5 = 20K R5 = 100K VCE - Collector-Emitter Voltage (Volts) Voltage Derating Graph The maximum permissible operational temperature can be obtained from this graph using the following equation Power(max ) - Power(act) T amb (max ) = 0.0057 +25 C Tamb(max)= Maximum operating ambient temperature Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE and source resistance (RS) Power(actual)= Actual power dissipation in users circuit 3-213 ZTX604 ZTX605 TYPICAL CHARACTERISTICS 1.8 1.6 -55C +25C +100C +175C 2.5 VCE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 IC/IB=100 hFE - Gain normalised to 1 Amp -55C +25C +100C 2.0 1.5 VCE=5V 1.0 0.5 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.2 2.0 1.8 -55C +25C +100C +175C 2.2 2.0 1.8 -55C +25C +100C VBE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.01 0.1 1 10 IC/IB=100 VBE - (Volts) 1.6 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.01 0.1 1 10 VCE=5V IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC Single Pulse Test at Tamb=25C 10 VBE(on) v IC IC - Collector Current (Amps) 1.0 D.C. 1s 100ms 10ms 1.0ms 100s 0.1 ZT X6 04 ZTX605 0.01 1 10 100 1000 VCE - Collector Voltage (Volts) Safe Operating Area 3-214 |
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